power transistors 1 publication date: april 2003 sjd00212aed 2SD1719 silicon npn triple diffusion planar type for power amplification with high forward current transfer ratio features ? high forward current transfer ratio h fe which has satisfactory lin- earity ? high emitter-base voltage (collector open) v ebo ? n type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. absolute maximum ratings t c = 25 c parameter symbol rating unit collector-base voltage (emitter open) v cbo 100 v collector-emitter voltage (base open) v ceo 60 v emitter-base voltage (collector open) v ebo 15 v collector current i c 6 a peak collector current i cp 12 a base current i b 3 a collector power dissipation p c 40 w t a = 25 c 1.3 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector-emitter voltage (base open) v ceo i c = 25 ma, i b = 060v collector-base cutoff current (emitter open) i cbo v cb = 10 0 v, i e = 0 100 a emitter-base cutoff current (collector open) i ebo v eb = 15 v, i c = 0 100 a forward current transfer ratio * h fe v ce = 4 v, i c = 1 a 300 2 000 ? collector-emitter saturation voltage v ce(sat) i c = 5 a, i b = 0.1 a 0.5 v transition frequency f t v ce = 12 v, i c = 0.5 a, f = 10 mhz 30 mhz turn-on time t on i c = 5 a 0.3 s strage time t stg i b1 = 0.1 a, i b2 = ? 0.1 a 1.5 s fall time t f v cc = 50 v 0.6 s electrical characteristics t c = 25 c 3 c unit: mm 8.5 0.2 3.4 0.3 1.0 0.1 0 to 0.4 6.0 0.2 0.8 0.1 r = 0.5 r = 0.5 1.0 0.1 0.4 0.1 (8.5) (6.5) (6.0) 1.3 (1.5) (7.6) 2.54 0.3 1.4 0.1 5.08 0.5 123 1.5 0.1 2.0 0.5 10.0 0.3 1.5 +0 ?0.4 3.0 +0.4 ?0.2 4.4 0.5 4.4 0.5 14.4 0.5 rank q p h fe 300 to 1200 800 to 2 000 1: base 2: collector 3: emitter n-g1 package note) self-supported type package is also prepared. note) 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. * : rank classification
2SD1719 2 sjd00212aed v be(sat) ? i c h fe ? i c f t ? i c p c ? t a i c ? v ce v ce(sat) ? i c c ob ? v cb t on , t stg , t f ? i c safe operation area 0 0 160 40 120 80 20 60 40 80 collector power dissipation p c ( w ) ambient temperature t a ( c ) (1)t c =ta (2)with a 50 50 2mm al heat sink (3)without heat sink (p c =1.3w) (1) (2) (3) 012 210 48 6 0 6 5 4 3 2 1 collector current i c ( a ) collector-emitter voltage v ce ( v ) i b =10ma 9ma 8ma 7ma 6ma 5ma 4ma 3ma 2ma 1ma t c =25?c 0.1 1 10 0.01 10 1 0.1 collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) i c /i b =50 t c =100?c 25?c ?5?c 0.01 0.1 1 10 10 10 2 10 3 10 4 10 5 forward current transfer ratio h fe collector current i c ( a ) v ce =4v t c =100?c 25?c ?5?c 0.01 1 10 0.01 10 1 0.1 base-emitter saturation voltage v be(sat) ( v ) collector current i c ( a ) i c /i b =50 t c =?5?c 25?c 100?c 0.01 0.1 1 10 0.1 1 10 100 1000 transition frequency f t ( mhz ) collector current i c ( a ) v ce =12v f=10mhz t c =25?c 0.1 1 10 100 1 10 collector-base voltage v cb ( v ) 10 2 10 4 10 3 collector output capacitance (common base, input open circuited) c ob (pf) i e =0 f=1mhz t c =25?c 0.01 0.1 1 10 100 08 26 4 turn-on time t on , storage time t stg , fall time t f ( s ) collector current i c (a) pulsed t w =1ms duty cycle=1% i c /i b =50 (i b1 =? b2 ) v cc =50v t c =25?c t stg t f t on 0.01 1 0.1 1 10 100 10 100 1000 collector current i c ( a ) collector-emitter voltage v ce ( v ) non repetitive pulse t c =25?c i cp i c t=10ms t=300ms t=1ms
2SD1719 3 sjd00212aed r th ? t 10 ? 2 10 ? 1 1 10 10 3 10 2 10 3 10 4 10 2 10 1 10 ? 1 10 ? 3 10 ? 2 10 ? 4 thermal resistance r th ( c/w) time t (s) (1) (2) (1)without heat sink (2)with a 50 50 2mm al heat sink
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